2003. 7. 24 1/2 semiconductor technical data kta1703 epitaxial planar pnp transistor revision no : 6 high voltage application. dc-dc converter. low power switching regulator. features h high breakdown voltage. : v ceo =-400v h low collector saturation voltage : v ce(sat) =-1v(max.), (i c =-100ma, i b =-10ma) h high speed switching. maximum rating (ta=25 ? ) electrical characteristics (ta=25 ? ) note : h fe classification o:60 q 120, y:100 q 200 characteristic symbol rating unit collector-base voltage v cbo -400 v collector-emitter voltage v ceo -400 v emitter-base voltage v ebo -7 v collector current dc i c -0.5 a pulse i cp -1 base current i b -0.25 a collector power dissipation ta=25 ? p c 1.5w w tc=25 ? 10w junction temperature t j 150 ? storage temperature t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector base voltage v (br)cbo i c =-100 a, i e =0 -400 - - v collector emitter voltage v (br)ceo i c =-1ma, i b =0 -400 - - collector cutoff current i cbo v cb =-400v, i e =0 - - -10 a emitter cutoff current i ebo v eb =-5v, i c =0 - - -10 dc current gain h fe (note) v ce =-5v, i c =-100ma 60 - 200 - collector-emitter saturation voltage v ce(sat) i c =-100ma, i b =-10ma - - -1 v base-emitter saturation voltage v be(sat) i c =-100ma, i b =-10ma - - -1.2 switching time turn on time t on i c =-100ma, r l =1.5k ? i b1 =-10ma, i b2 =20ma v cc =-150v - - 1 s storage time t stg - - 4 fall time t f - - 1
2003. 7. 24 2/2 kta1703 revision no : 6
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